Fibrous Growth of Titanium Nitride by Discharge

Substrate Effects on the APCVD Growth of Titanium Nitride Films

Passivation of GaAs surface by atomic-layer-deposited titanium nitride

The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....

Direct synthesis of titanium nitride by laser-plasma

Thermal stability of a-titanium in contact with titanium nitride

The thermal stability of an a-Ti film in contact with a d-TiN film in the structure of a TiN/Ti/TiN film stack on SiO2 substrates was studied by in situ sheet resistance (Rs) measurement, Auger electron spectroscopy, glancing angle x-ray diffractometry, cross-sectional transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. It was found that nitrogen dissolv...

Titanium Nitride Thin Films by the Electron Shower Process

Titanium nitride (TiN), a stable compound with the NaCl structure, has a wide range of properties which find applications in cutting tools, wear resistant parts, semiconductor metallization, and the jewelry industry. However, there are problems with preparing highly adhesive thin films which maintain good properties. Thin films of titanium nitride have been prepared by the Electron Shower (ES) ...